features l planar die construction l 200mw power dissipation l zener voltages from 2.4v - 39v l ideally suited for automated assembly processes mechanical data l case: sod - 323 molded plastic l terminals: solderable per mil-std-202, method 208 l approx. weight: 0.008 gram l mounting position: any l storage & operating ju nct i on temperature: - 55 o c to +150 o c maximum ratings @ 25 o c unless otherwise specified zener current i f 100 ma maximum forward voltage v f 1.2 v power dissipation ( no te s a ) p (av) 2 00 mwatt pe ak f o r w ar d s ur ge i f sm 2 . 0 a mps notes: mmxz5221 b thru mmxz52 59 b 200 mw zener diodes 2.4 to 39 volts mcc ww w . mccsemi .com a. mounted on 5.0mm2(.013mm thick) l a nd ar e a s . b. me a sured on 8.3ms, single ha l f sine-wave or equivalent c ur rent (not e s b) square wave, duty cycle = 4 pulses per minute maximum . inches mm dim min max min ma x note a .090 .107 2.30 2.70 b .06 8 .07 8 1. 75 1. 9 5 c .045 .05 4 1.15 1.35 d .0 27 .0 38 0. 7 0 0. 95 e .0 09 .01 4 0.25 0. 35 f .00 2 .0 06 0. 05 0. 1 5 g . 012 --- 0. 30 --- sod323 0. 0 31 ? 0.0 59 " 0.0 39 ? suggested solder pad layout a b e c d f g dimensions
om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $
% ! " #
ww w . mccsemi .com note: 1 . t oler a nce a nd t ype number d e sig n ation. the type numbers listed have a st a ndard toler a nce on the nominal zener voltage of 5%. 2. specials available include: a. nominal zener voltages between the voltages shown and tighter voltage tolerances. b. matched sets. 3. zener voltage (v z ) measurement. guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 o c, from the diode body. 4. zener impedance (z z ) derivation. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 5. surge current (i r ) non-repetitive. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge curr ent of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5. mm x z5221 b th ru mm x z52 59 b mcc electrical characteristics @ 25 o c unless otherwise specified normal zener voltage vz@ izt test current izt maximum zener impedance ?b? suffix only zzt @ izt zzk @ izk=0.25ma maximum reverse leakage current ir @ vr maximum zener voltage temp coefficient ?b? suffix only mcc part number marking volts ma ohms ohms ua volts %/ o c mm x z5221b c1 2.4 20 30 1200 100 1.0 - 0.085 mm x z5222b c2 2.5 20 30 1250 100 1.0 - 0.085 mm x z5223b c3 2.7 20 30 1300 75 1.0 - 0.080 mm x z5225b c5 3.0 20 29 1600 50 1.0 - 0.075 mm x z5226b d1 3.3 20 28 1600 25 1.0 - 0.070 mm x z522 7b d2 3.6 20 24 1700 15 1.0 - 0.065 mm x z5228b d3 3.9 20 23 1900 10 1.0 - 0.060 mm x z5229b d4 4.3 20 22 2000 5.0 1.0 0.055 mm x z5230b d5 4.7 20 19 1900 5.0 2.0 0.030 mm x z5231b e1 5.1 20 17 1600 5.0 2.0 0.030 mm x z5232b e2 5.6 20 11 1600 5.0 3.0 +0.038 mm x z5234b e4 6.2 20 7.0 1000 5.0 4.0 +0.045 mm x z5235b e5 6.8 20 5.0 750 3.0 5.0 +0.050 mm x z5236b f1 7.5 20 6.0 500 3.0 6.0 +0.058 mm x z5237b f2 8.2 20 8.0 500 3.0 6.5 +0.062 mm x z5239b f4 9.1 20 10 600 3.0 7.0 +0.068 mm x z5240b f5 10 20 17 600 3.0 8.0 +0.075 mm x z5241b h1 11 20 22 600 2.0 8.4 +0.076 mm x z5242b h2 12 20 30 600 1.0 9.1 +0.077 mm x z5243b h3 13 9.5 13 600 0.5 9.9 +0.079 mm x z5245b h5 15 8.5 16 600 0.1 11 +0.082 mm x z5246b j1 16 7.8 17 600 0.1 12 +0.083 mm x z5248b j3 18 7.0 21 600 0.1 14 +0.085 mm x z5250b j5 20 6.2 25 600 0.1 15 +0.086 mm x z5251b k1 22 5.6 29 600 0.1 17 +0.087 mm x z5252b k2 2 4 5.2 33 600 0.1 18 +0.088 mm x z5254b k4 27 4.6 41 600 0.1 21 +0.090 mm x z5255b k5 28 4.5 44 600 0.1 21 +0.091 mm x z5256b m1 30 4.2 49 600 0.1 23 +0.091 mm x z5257b m2 33 3.8 58 700 0.1 25 +0.092 mm x z5258b m3 36 3.4 70 700 0.1 27 +0.093 mm x z5259b m4 39 3 .2 80 800 0.1 30 +0.094
mm x z5221 b th ru mm x z52 59 b ww w . mccsemi .com mcc typical reverse current tempera ture c oefficient ,mv / c) o nominal zener voltage, volts -1 0 1 2 3 4 5 6 7 8 12 11 10 98765432 -2 -3 steady s tate power derating effect of zener voltage on zener impedance 100101 1000 100 10 1 i z =1ma 5ma 20 ma dynamic impedance, normal zener voltage, volts t j =25 c o i z(ac)=0.1 i f=1 khz z(dc) for w ard c urrent ,m a typical forward voltage forward voltage, volts 1.21.11.00.90.80.70.60.50.4 1000 100 10 1 75 c o 5c o 25 c o 150 c o typical capacitance 100 1000 100 10 1 101 bias at 50% of v z nom 0 v bias 1 v bias cap acit ance, pf nominal zener voltage, volts t =25 c a o 100 10 1 nominal zener voltage, volts tempera ture c oefficient ,mv / c) o 10 100 temperature ( c) o power d issip a tion, w atts steady s tate power derating 1.2 1.0 0.8 0.6 0.4 0.2 0 150125100755025 p dv . s .t a 155
mm x z5221b th ru mm x z52 59b mcc ww w . mccsemi .com zener voltage v.s. zener current typical leakge current 90 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80706050403020100 leakage current ( a) nominal zener voltage, vlots +150 c o +25 c o -55 c o 12 100 10 1 0.1 0.01 1086420 zener current ,m a zener voltage, volts t =25 c a o 100 10 1 0.1 0.01 10 30 50 70 90 t =25 c a o zener voltage, volts zener voltage v.s. zener current zener current ,m a
|
